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| Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM4279 5 FEATURES 40V, 6.1A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 46m @VGS = 4.5V. -40V, -4.3A, RDS(ON) = 66m @VGS = -10V. RDS(ON) = 105m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 D1 8 D1 7 D2 6 D2 5 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 40 P-Channel -40 Units V V A A W C 20 6.1 24 2.0 -55 to 150 20 -4.3 -17 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 2. 2007.Jan http://www.cetsemi.com CEM4279 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.0A VDS = 20V, ID = 6.1A, VGS = 4.5V VDD = 20V, ID = 6.1A, VGS = 10V, RGEN =3 14 10 17 18 10.1 3.5 4.0 6.1 1.0 30 20 35 35 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 5V, ID = 6.1A VDS = 20V, VGS = 0V, f = 1.0 MHz 3 1050 155 95 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250A VGS = 10V, ID = 6.1A VGS = 4.5V, ID = 4.9A 1 25 35 3 32 46 V m m BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250A VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 40 1 100 -100 V A TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM4279 P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.3A VDS = -20V, ID = -4.3A, VGS = -4.5V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6 13 3 31 5 5.6 2.1 2.3 -4.3 -1.2 26 6 62 10 7.4 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = -250A VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250A VGS = -10V, ID = -4.3A VGS = -4.5V, ID = -3.7A VDS = -5V, ID = -4.3A VDS = -20V, VGS = 0V, f = 1.0 MHz -1 55 85 7 705 125 75 Min -40 -1 100 -100 -3 66 105 Typ Max Units V A Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss 5 nA nA V m m S pF pF pF Forward Transconductance Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 CEM4279 N-CHANNEL 20 VGS=10,8,6,5V 16 VGS=4V 15 ID, Drain Current (A) ID, Drain Current (A) 12 12 9 5 25 C 8 6 VGS=3V 4 3 TJ=125 C -55 C 2 3 4 5 0 0 1 2 3 4 0 0 1 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1500 1250 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=6.1A VGS=10V C, Capacitance (pF) Ciss 1000 750 500 250 0 0 Crss 5 10 15 20 25 Coss -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250A IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 P-CHANNEL 25 20 15 10 5 0 -VGS=10,8V CEM4279 10 -ID, Drain Current (A) -VGS=5.0V -ID, Drain Current (A) 8 6 4 25 C 2 TJ=125 C -55 C 2 3 4 5 0 -VGS=4.0V 0 0.5 1 1.5 2 2.5 0 1 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 600 450 300 150 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=-4.3A VGS=-10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=-250A 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 5 N-CHANNEL VGS, Gate to Source Voltage (V) 4 3 2 1 0 CEM4279 10 2 5 V =20V DS ID=6.1A RDS(ON)Limit 1 ID, Drain Current (A) 10 10 0 1ms 10ms 100ms 1s DC 5 10 -1 0 2 4 6 8 10 12 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area RDS(ON)Limit P-CHANNEL -VGS, Gate to Source Voltage (V) 5 4 3 2 1 0 VDS=-20V ID=-4.3A 10 2 -ID, Drain Current (A) 10 1 1ms 10ms 100ms 1s DC 10 0 10 -1 0 1.2 2.4 3.6 4.8 6 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEM4279 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 5 S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 t2 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2 10 -2 Single Pulse -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 |
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